DDR

DDR5

Samsung DDR5 delivers per-pin speeds up to 8,000 Mbps and supports densities
up to 32 Gb, ensuring improved signal integrity and stable operation with on-die ECC.
With TSV-based stacking and a dual 32-bit sub-channel architecture, it is optimized for data-intensive cloud services, high-throughput computing, and large-scale enterprise workloads.

DDR5 Module

DDR4

Samsung DDR4 delivers data rates up to 3,200 Mbps and supports densities up to 32 Gb, providing stable and energy-efficient operation at 1.2 V. Its bank-group architecture enhances throughput and scalability, making it a proven solution for mainstream computing environments.

DDR4 Module

HBM

HBM4

Built on advanced 1c DRAM and 4nm logic base-die, HBM4 redefines system capability —
delivering up to 2.7× higher throughput and up to 40% greater power efficiency.
With 2,048 I/O pins enabling up to 3,300 GB/s of bandwidth, it removes memory bottlenecks in AI accelerators and unlock new levels of compute performance.

HBM3E

Designed for extreme AI workloads, Samsung HBM3E delivers up to 9.2 Gb/s per pin and up to 1,180 GB/s of bandwidth per stack, powering LLMs, generative AI, and advanced inference with remarkable speed and efficiency. Trusted for demanding AI platforms, Samsung HBM3E also provides a clear evolution path toward next-generation memory innovation.

HBM3

Designed for advanced AI and HPC systems, Samsung HBM3 delivers 6.4 Gb/s per pin and up to 819 GB/s of bandwidth per stack, with 16 GB and 24 GB capacity options. Widely adopted across AI training clusters, inference systems, GPUs, and HPC accelerators, Samsung HBM3 offers an ideal balance of throughput and efficiency, establishing a proven foundation for modern AI platforms.