PB6800

PB6800

SiC KGD Die Handler

Semight PB6800 is a high-end SiC KGD Die Handler widely used in the power electronics industry, specializing in dynamic and static parameter testing of bare die-level SiC power chips. It adopts a modular design and supports multiple chip feeding methods, including Frame Ring, Tape & Reel, and Tray. The system also supports Hard Docking connection and multi-station room/high-temperature testing, equipped with high-voltage anti-arcing functionality.

10

Excellent Scalability

Modular design with loading, unloading, and multiple test stations

11

Six-Channel Parallel Testing

Supports up to 2 temperature zones for testing
Different test stations support varying test conditions and items

12

Dynamic, Static, and UIS Tests

Static test 2000 V/ 600 A
Dynamic test 1200 V/ 2000 A

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Modular Unloading Design

Supports unloading in wafer / wafer + tape & reel / wafer + auto tray configurations

24

Precise Temperature Control

Range: RT ~ 200°C,
accuracy: ±3°C,
resolution: 0.1°C

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Airtight Socket Design

Prevents high-voltage arcing
through nitrogen protection
and air pressure monitoring

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Efficient Multi-station

Up to 6 test stations
with a test time of 0.7s
and UPH > 4000

21

Good Maintainability

Supports automatic socket replacement in case of die failure,
improving equipment uptime

Category Parameter Specification
Basic Parameters Type SiC, IGBT
UPH Up to 4700, including input and output
Loader Wafer, Auto Tray, Tape
Unloader Wafer / Wafer + Auto Tray / Wafer + Tape&Reel
Temperature Control Temperature Range Up to 200°C
Tolerance ≤±3°C
Vision Inspection

System

Station Up to 6
Stray Inductance ≤40 nH
Retrofit Kit Socket
Die Size 2.5*2.5 mm-8*8 mm
Die Thickness 100 µm- 400 µm
P&P Accuracy ±30 µm
Unloader Wafer / Wafer +Auto Tray / Wafer+Tape&Reel
Socket Replacement Auto
Socket Cleaning Auto
AOI 6
AOI Accuracy ≥12 µm
Defect Inspection Frontside / Backside: Scratches, Stains, Foreign Material, Cracks, Unfilled Corners, and Chipping.

Side: Edge Chipping

Stability

 

 

 

 

 

 

 

MTBF >168H
MTBA >2H
MTTA <5 min
MTTR <30 min
Drop Rate ≤0.01%
Fragmentation Rate ≤0.01%
Probe Depth ≤2 µm
Drain Kelvin ≤2 Ω