WLBI370A

WLBI370A

Wafer Level Burn-In System

The WLBI370A Wafer Level Burn-in System is a fully automated SiC wafer burn-in testing solution. It offers ultra-high burn-in capacity, capable of performing High-Temperature Gate Bias (HTGB) burn-in on up to 20 wafers simultaneously. Burn-in conditions can be configured to meet the requirements of different products. The system enables precise threshold voltage (Vth) testing for each die and features independent overcurrent protection on each channel to ensure device safety. It supports integration with customer EAP systems for production data management and automatically generates MAP data for detailed performance analysis and quality control.

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Fully Automated System

Automated wafer and fixture loading/unloading without manual intervention

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High Throughput

Supports simultaneous HTGB burn-in of up to 20 wafers at full capacity

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High Compatibility

Easy switching between 6-inch and 8-inch wafers by replacing fixtures

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Independent Temperature Control

Each drawer is equipped with independent temperature control and power systems, ensuring precise and stable burn-in conditions for each wafer

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Multi-channel Testing

Supports up to 1,500 channels per layer for burn-in
Burn-in channel capacity can be expanded via second touchdown

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High-precision Testing

0.1nA leakage current resolution

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Wide Temperature Range

Temperature control ranges from 40°C to 175°C

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Comprehensive System Features

Real-time monitoring of Igss and Vth testing
Robust hardware protection against overcurrent and overvoltage

Functions and advantages

  • WLBI370A consisting of the main system, burn-in layers, and burn-in fixtures.
  • Integrated wafer handling system with automated wafer transfer, fixture loading/unloading, and coupling mechanisms.
  • Built-in burn-in chambers with dedicated cooling units for stable and reliable testing.
  • Supports up to 10 burn-in layers per chamber for flexible test configurations.
  • Maximum capacity of 20 burn-in layers in a fully configured system.
  • Each burn-in layer accommodates one wafer fixture, enabling independent testing.
  • Simultaneous burn-in of up to 20 wafers for high-throughput production and reliability testing.

The specific configuration is as follows:

Suitable for SiC Wafer
Applicable Packages 6-inch, 8-inch Wafer
Burn in Type HTGB
Test Parameters Igss, Vth
System Size 3000mm(W) X 2500mm(H) X 4500mm(D)
Nitrogen Protection Yes
Temperature range 45°C  to 175°C
Voltage Range Gate ±70V
System Channels/ Layer 1500
System Layers 20
Supports Cassette Feeding Up to 50 PCS

(Uploading area: 2 cassettes, with 1 cassette:
If wafer warp is less than 500μm, it can accommodate 25 pcs.
If wafer warp is between 500μm and 3mm, it can accommodate 13 pcs.

Power Supply 380V, 20A three-phase, 50-60Hz
Software System Windows
Software Language Environment VS/C#