

WLBI370A
WLBI370A
Wafer Level Burn-In System
The WLBI370A Wafer Level Burn-in System is a fully automated SiC wafer burn-in testing solution. It offers ultra-high burn-in capacity, capable of performing High-Temperature Gate Bias (HTGB) burn-in on up to 20 wafers simultaneously. Burn-in conditions can be configured to meet the requirements of different products. The system enables precise threshold voltage (Vth) testing for each die and features independent overcurrent protection on each channel to ensure device safety. It supports integration with customer EAP systems for production data management and automatically generates MAP data for detailed performance analysis and quality control.

Fully Automated System
Automated wafer and fixture loading/unloading without manual intervention

High Throughput
Supports simultaneous HTGB burn-in of up to 20 wafers at full capacity

High Compatibility
Easy switching between 6-inch and 8-inch wafers by replacing fixtures

Independent Temperature Control
Each drawer is equipped with independent temperature control and power systems, ensuring precise and stable burn-in conditions for each wafer

Multi-channel Testing
Supports up to 1,500 channels per layer for burn-in
Burn-in channel capacity can be expanded via second touchdown

High-precision Testing
0.1nA leakage current resolution

Wide Temperature Range
Temperature control ranges from 40°C to 175°C

Comprehensive System Features
Real-time monitoring of Igss and Vth testing
Robust hardware protection against overcurrent and overvoltage
Functions and advantages
- WLBI370A consisting of the main system, burn-in layers, and burn-in fixtures.
- Integrated wafer handling system with automated wafer transfer, fixture loading/unloading, and coupling mechanisms.
- Built-in burn-in chambers with dedicated cooling units for stable and reliable testing.
- Supports up to 10 burn-in layers per chamber for flexible test configurations.
- Maximum capacity of 20 burn-in layers in a fully configured system.
- Each burn-in layer accommodates one wafer fixture, enabling independent testing.
- Simultaneous burn-in of up to 20 wafers for high-throughput production and reliability testing.
The specific configuration is as follows:
| Suitable for | SiC Wafer |
| Applicable Packages | 6-inch, 8-inch Wafer |
| Burn in Type | HTGB |
| Test Parameters | Igss, Vth |
| System Size | 3000mm(W) X 2500mm(H) X 4500mm(D) |
| Nitrogen Protection | Yes |
| Temperature range | 45°C to 175°C |
| Voltage Range | Gate ±70V |
| System Channels/ Layer | 1500 |
| System Layers | 20 |
| Supports Cassette Feeding | Up to 50 PCS
(Uploading area: 2 cassettes, with 1 cassette: |
| Power Supply | 380V, 20A three-phase, 50-60Hz |
| Software System | Windows |
| Software Language Environment | VS/C# |


