WLBI3810
WLBI3810
Wafer Level Burn-In System
Semight WLBI3810 Wafer Level Burn-In System is a high-end burn-in test system for SiC and GaN wafers, supporting simultaneous HTGB and HTRB testing on up to 9 wafers with flexible test durations from minutes to thousands of hours. It features fully automated loading and unloading, seamless test mode switching, automatic burn-in condition adjustment, high-precision per-die Vth measurement, independent over-current protection for each channel, and detailed wafer map generation, making it ideal for both high-volume production and R&D applications.
Automated Loading and Unloading
Fully automated wafer handling minimizes manual intervention, boosting efficiency and accuracy
Precise Probing
Delivers ±25μm probe mark repositioning accuracy for reliable testing
Comprehensive System Features
Supports map data binding for traceability and testing up to 2560 dies simultaneously
Multimode Burn-in
Automatically switches between HTGB and HTRB modes
Leakage Current Monitoring
Igss and Idss leakage current monitoring
Integrated Testing Functions
Includes Vth parameter testing for in-depth analysis
Exceptional Measurement Accuracy
Offers maximum resolution of 0.1nA
Maximum leakage current accuracy 0.5nA
Precise Temperature Control
Ensures uniformity within ±2℃@ TR~175℃, accuracy within 1℃, and resolution of 0.1℃
Functions and advantages
System Configuration
- Up to 9 independently controlled burn-in stations.
- One wafer per burn-in station for dedicated testing.
- Simultaneous operation in multiple burn-in modes.
- Supports configurable burn-in verification plans.
- Designed for flexible, high-efficiency wafer burn-in testing.
WLBI3810（RB+GB）System Configuration:
| No | Model | Description | Specification |
| 1 | Wafer Level Burn-in System Loader | WLBI3810-AL | – Supports fully automatic wafer loading and unloading
– Can be adapted to SMIF docking with customer’s overhead transport system – Automatically obtains wafer status within cassette – Wafer ID reading – Wafer flattening |
| 2 | Wafer Level Burn-in System Handler 1 | WLBI3810-H1 | – Implement wafer transfer between the loader and burn-in machine layers 1-3 |
| 3 | Wafer Level Burn-in System Handler 2 | WLBI3810-H2 | – Implement wafer transfer between the loader and burn-in machine layers 4-9 |
| 4 | Wafer Level Burn-in System Burn-in Chamber | WLBI3810-M | – Includes burn-in system cabinets and their automation parts.
– 6&8 inch wafers – Temperature RT～175℃ – Temperature uniformity ≤±2℃, accuracy ≤1℃, resolution 0.1℃ – Supports pin mark repeatability ≤ ±25μm – Supports nitrogen protection to prevent high-voltage arcing and Pad oxidation Note: HTGB+HTRB: Full configuration with 9 stations |
| 5 | Wafer Level Burn-in System Single Layer | WLBI3810-L | – High-precision leakage current testing, with leakage current resolution up to 0.1nA
– Supports Map data binding for traceable data – HTGB and HTRB automatically switchable, with negative voltage applied to the Gate during RB aging – Igss and Idss leakage configuration can be scanned – Integrated Vth parameter testing – Flexible configuration of burn-in plans – Support for SECS/GEM communication interface – Software supports local data and database upload, and supports EAP integration – Supports CP MAP data import – Supports online editing of test Recipe – Software supports three-level permission management and multi-account management – 1 year free maintenance Note: HTGB+HTRB fully configured with 9 workstations |
| 6 | Wafer Level Burn-in System Fixture | WLBI3810-F | – Supports 6&8 inch wafers
– For SiC wafer aging: HTGB+HTRB – Fixture maximum withstand voltage 2000V (maximum withstand voltage may be affected by individual die size) – Full Touch, aging all Die at once, up to 2112 Die (2560 Die requires customization) |